A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

A

Å : Angstrom

A-defects : Dislocation loops in silicon formed by agglomeration of interstitial

AA: Atomic absorption

AE : Acid etch

AFM : Atomic force microscopy

ALCVD : Atomic layer chemical vapor deposition

AMC : Barrel or batch type epi reactor (Applied Materials)

APCVD : Atmospheric:pressure chemical vapor deposition furnace

ASIC : Application specific integrated circuit

ASM : A single-chamber epi reactor (ASM America)

ASTM : American Standard Test Method

ASTM : American society for testing and materials

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B

BESOI : Bonded and Etch Back SOI

BGSOI : Bonded and Grind Back SOI

BJT : Bipolar Junction Transistor

BMD : Bulk Micro-defects or Bulk Micro-defect Density

BOE : Buffered Oxide Etch

Box : Buried Oxide Layer

BP : Backside Polish

BV : Breakdown Voltage

Bvox : Breakdown Voltage-oxide

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C

°C : Centigrade

°C/min : Centigrade per minute

CD : Critical dimension

CE : Caustic Etch

Cm : Centimeter (0.01 meter)

CMOS : Complementary metal Oxide Semiconductor

CMP : Chemical Mechanical Polishing

CO : Carbon Monoxide

CO² : Carbon Dioxide

COO : Cost of Ownership

COP’s : Crystal Originated Particles

CoQC : Certificate of Quality Conformance

CP : Crystal Puller

CV : Capacity or capacitance voltage

CVD : Chemical Vapor Deposition

CZ : Czochralski method of pulling single crystal.

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D

D-defects : Very small voids in Silicon formed by agglomeration of vacancies

DIBL : Drain induced barrier lowering

DIC : Differential interference contrast

DL : Diffusion length

DMOS : Double-diffused MOS

DOE : Design of Experiments

DOF : Depth of Focus

DRAM : Dynamic Random Access memory

Dsod : Direct Surface oxide Defect

DSP : Double Sided Polish

DZ : Denuded Zone

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E

eDRAM : Embedded Dynamic Random Access Memory

EG : Enhanced Gettering

EEPROM : Electrically:erasable and Programmable Read-only Memory

EPROM : Erasable and Programmable Read-only memory

EOT : Equivalent Oxide Thickness

EPI : Epitaxy

ESF : Epi Stacking Fault

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F

FBE : Floating Body Effect

FET : Field Effect Transistor

FD:SOI : Fully depleted silicon-on-Insulator

FPD : Flow pattern Defect (ref. Crystal)

FPD : Focal Plane Deviation (ref. Mechanical flatness)

FRAM : Ferroelectric Random Access Memory

FTIR : Fourier Transform Infra-Red Spectroscopy

FZ : Float Zone method of Crystal Pulling

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G

GBIR : Global flatness, back:referenced

Ge OI: Germanium-on-Insulator

GFA : Gas Fusion Analysis

GOI : Gate Oxide Integrity

GTIR : Global Total Indicated Reading

GUI : Graphical User Interface

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H

H²: Hydrogen Gas

H²O² : Hydrogen Peroxide

HCl: Hydrogen Chloride

HF : Hydrofluoric Acid

HMOS : High performance MOS

HZ : Hot zone

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I

IC : Integrated Circuit

IDM : Integrated Device Manufacture

IG : Internal Gettering

IGBT : Insulated Gate Bipolar Transistor

IQC : Incoming Quality Control

ISO : Internation Standards Organization

ITOX : Internal Oxidation

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J

JFET : Junction Field Effect Transistor

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K

kg: Kilogram

kN : Kilo Newton

KOH : Potassium Hydroxide

KP : Kilo Pascal

KSIE : Thousand Square Inch Equivalent

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L

LAD : Large Area Defect

Lg : Transistor Gate length

LLS : Localized Light Scatterers

LLPD’s : Large Light Point Defects

LPCVD: Low Pressure Chemical Vapor Deposition

LPD's : LIght Point Defects

LPD-E : LIght Point Defect, class E (a KLA-Tencore SP1 defect class)

LPD-N : Light Point Defect, class N (a KLA-Tencor SP1 defect class)

LPD-S : Light Point Defect, class S (a KLA-Tencor SP1 defect class)

LPE : Liquid Phase Epitaxy

LSE : Latex Sphere Equivalent particle size

LSI : Large scale integration

LSTD : Laser Scattering Topographic Detection

LTO : Low Temperature Oxide

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M

M9K : MEMC Proprietary polishing machine

MBE : Molecular Beam Epitaxy

MDZ : Magic Denuded Zone (gettering)

MEMS : Micro-ElectroMechanical System

MIM : Metal-Insulator:Metal

MLD : Modified Low Dose

mm : 1/1000 of a meter and 0.03937 inch

mm/min : Millimeters per minute

MNOS : Metal Nitride Oxide Semiconductor

MOCVD : MetalOrganic Chemical Vapor Deposition

MODFET : Modulation-Doped Field Effect Transistor

MOS : Metal Oxide Semiconductor

MOSFET : Metal Oxide Semiconductor Field Effect Transistor

MRAM : Magneto resistive Random Access Memory

MSI : Medium-scale integration

MSIE : Million Square Inch Equivalent

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N

N : Silicon doped to create excess negative charge carriers (electrons)

N+ : Heavily doped, N-type silicon

NT : Nanotopography

N² : Nitrogen gas

nm : Nanometers

NMOS : N-channel Metal Oxide Semiconductor

NPT : Non-Punch Through

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O

O² : Oxygen

Oi: Interstitial Oxygen

OISF : Oxidation:Induced Stacking Fault

OPP : Optical Precipitate Profiler

OUM : Ovonics Undivided Memory

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P

P : Silicon doped to create excess positive charge carriers (holes)

P- : Lightly doped P:type silicon wafer

P+ : Heavily doped P-type silicon wafer

P/P+ : Lightly doped P-type epi layer on a heavily doped P-type substrate

P/P- : Lightly doped P-type epi layer on a lightly doped P-type substrate

P-band : Anomalous oxygen precipitation region in vicinity of the vacancy/interstitial boundary

PD-SOI : Partially Depleted Silicon-on-Insulator

PECVD : Plasma Enhanced Chemical Vapor Deposition Furnace

PFRAM : Polymeric Ferro electric Random Access memory

PFZ : Precipitate Free Zone (depth measured from the surface that is free of oxygen precipitates but not necessarily depleted in interstitial oxygen)

PMOS : P-channel Metal Oxide Semiconductor

PPB : Parts Per Billion

PPC : Post Polish Clean

PPE : Personal Protective Equipment

PPM : Parts per Million

PPMA : Parts Per Million Atomic

PPMD : Parts Per Million Defective

PPT : Parts per Trillion

PROM : Programmable Read:only Memory

PT : Punch Through

P/V : Peak to Valley measurement

PZT : Lead Zirconate Titanate

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R

RAM : Random Access Memory

RF : Radio Frequency

RFCMOS : Radio-Frequency Complementary Metal Oxide Semiconductor

ROM : Read:only Memory

RSD : Raised Source/Drain

RTA : Rapid Thermal Anneal

RTP : Rapid Thermal Process

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S

SAC : Sub micron Application Crystal

SBIR : Site Flatness, back-referenced

SBSD : Soft Backside Damage

SC1 : 1st cleaning bath in the standard "RCA clean" sequence, consisting of solutions designed to remove particles from Si surface

SC2 : 2nd cleaning bath in the standard "RCA clean" sequence, consisting of solutions designed to remove particles from Si surface

SCE : Short Channel Effects

SEM : Scanning Electron Microscope

SFQR : Site flatness, best:fit, front-referenced

SFSR : Site flatness, best:fit, front-referenced, scanning site

SGOI : Strained Si on SiGe on Insulator

Si : Silicon

SIE : Square Inch Equivalent

SIMOX : Separation by Implantation of Oxygen

SIMS : Secondary Ion Mass Spectroscopy

SiO : Silicon Monoxide

SiO² : Silicon Dioxide

SIP : Single Inline Package

SIRM : Scanning Infra:red Microscope

SoC : System-on-a-Chip

SOI : Silicon:on:Insulator

SOS : Silicon-on-Sapphire

SPT : Soft Punch Through

SPV : Surface Photovoltage

SRAM : Static Random Access Memory

SRP : Spreading Resistance Probe or Spreading Resistance Profile

SSI : Small-scale integration

sSi : Strained Silicon

SSIS : Surface Scanning Inspection System

SSOI : Strained Silicon directly on Insulator

SSP : Single Side Polish

STD : Standard

STD CZ : Standard Czochralski-grown Crystal

STI : Shallow Trench Isolation

STIR : Site TIR (Total Indicated Reading)

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T

T: Temperature

TCS : Trichlorosilane

TEM : Transmission Electron Microscope

TIR : Total Indicated Reading

TOX : Gate Oxide Thickness

Tsoi : Thickness of SOI top Si Layer

TSOP : Thin Small Outline Package

TTV : Total Thickness Variation

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U

ULSI : Ultra Large:scale Integration

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V

v/G : v: growth rate (crystal pulling rate), G: Vertical temperature gradient at melt/solid interface

VI : Vacancy Interstitial

VLSI : Very Large-scale Integration

VPE : Vapor Phase Epitaxy

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W

WRFTIR : Whole Rod Fourier Transform Infra-Red Spectroscopy

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Y

XTL : Crystal

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Z

ZD : Zero Dislocation

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